excelics eia1415 - 8p not recommended for new designs. contact factory. effective 03/2003 14.4 - 15.35ghz, 8w internally matched power fet 14.4 - 15.35ghz bandwidth and input/output impedance matched to 50 ohm high pae( 20% typical) +39dbm typical p 1db output power 6.5db typical g 1db power gain non - hermetic metal flange package electrical characteristics (t a = 25 o c) eia1415 - 8p symbols parameters/test conditions min typ max unit p 1db output power at 1db compression f=14.4 - 15.35ghz vds=8v, idsq=0.5 idss 38 39 dbm g 1db gain at 1db compression f=14.4 - 15.35ghz vds=8v, idsq=0.5 idss 5.5 6.5 db pae power added efficiency at 1db compression f=14.4 - 15.35ghz vds=8v, idsq=0.5 idss 20 % id 1db drain current at 1db compression 3520 ma ip 3 output 3 rd order intercept point f=14.4 - 15.35ghz vds=8v, idsq=0.5 idss 46 dbm i dss saturated drain current vds=3v, vgs=0v 4400 5760 6800 ma g m transconductance vds=3v, vgs=0v 6000 ms v p pinch - off voltage vds=3v, ids=48ma - 1.0 - 2.5 v bv gd drain breakdown voltage igd=19.2ma - 13 - 15 v r th thermal resistance (au - sn eutectic attach) 2.3 o c/w maximum ratings at 25 o c symbols parameters absolute 1 c ontinuous 2 vds drain - source voltage 12v 8v vgs gate - source voltage - 8v - 3v ids drain current idss 6240ma igsf forward gate current 720ma 120ma pin input power 38dbm @ 3db compression tch channel temperature 175 o c 150 o c tstg storage temperature - 65/175 o c - 65/150 o c pt total power dissipation 60w 50w note: 1. exceeding any of the above ratings may result in permanent damage. 2. exceeding an y of the above ratings may reduce mttf below design goals. excelics semiconductor, inc., 310 de guine drive, sunnyvale, ca 94085 phone: (408) 737 - 1711 fax: (408) 737 - 1868 web site: www.excelics.com om
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